Modeling localized temperature changes on an integrated circuit chip using thermal potential theory

ABSTRACT

A temperature change of a device on an integrated circuit chip due to self-heating and thermal coupling with other device(s) is modeled considering inefficient heat removal from the backside of the chip. To perform such modeling, ratios of an imaginary heat amount to an actual heat amount for different locations on the IC chip must be predetermined using a test integrated circuit (IC) chip. During testing, one test device at one specific location on the test IC chip is selected to function as a heat source, while at least two other test devices at other locations on the test IC chip function as temperature sensors. The heat source is biased and changes in temperature at the heat source and at the sensors are determined. These changes are used to calculate the value of the imaginary heat amount to actual heat amount ratio to be associated with the specific location.

FIELD OF THE INVENTION

The embodiments disclosed herein relate to integrated circuit (IC) chipdesign and, more particularly, to embodiments of a system and method formodeling temperature changes at one location on an IC chip based on heatgenerated at one or more other locations on the IC chip.

BACKGROUND

More particularly, the performance of a device (e.g., a field effecttransistor (FET), a bipolar transistor, a resistor, a capacitor, etc.)on an integrated circuit (IC) chip can vary as a function oftemperature. The temperature of a device can vary due to theself-heating effect (SHE). The self-heating effect refers to heatgenerated by the device itself, when active. Those skilled in the artwill recognize that there is a strong relationship between the supplyvoltage applied to a device when active and the temperature of thatdevice. The temperature of a device can also vary due to the thermalcoupling (i.e., due to the device's proximity to adjacent heatsource(s), such as adjacent device(s)). Current modeling techniquesprovide for modeling localized temperature changes due to self-heatingand due to thermal coupling with adjacent heat source(s). However,modeling of a localized temperature change due to thermal couplingtypically involves calculations of thermal resistance along thermalpathways and such calculations can be quite complex, time consuming andoftentimes inaccurate. This is particularly true when heat removal(e.g., by convection or radiation) from the backside of IC chipcontained in a chip package is inefficient such that the temperaturedistribution across the backside of the IC chip varies, changing theheat flow lines and, thereby changing the thermal resistances that needto be calculated. Therefore, there is a need in the art for a moreefficient technique for modeling such localized temperature changes dueto self-heating and thermal coupling.

SUMMARY

In view of the foregoing, disclosed herein embodiments of a system andmethod for thermal modeling and, particularly, for modeling atemperature change of a device on a frontside of an integrated circuit(IC) chip due to self-heating, if any, and further due to thermalcoupling with device(s) on the frontside of the IC chip, given thepossibility of inefficient heat removal from the backside of the ICchip. The embodiments avoid the need for calculations of thermalresistances by employing thermal potential theory. Specifically, in theembodiments, a boundary condition can be set off the backside of the ICchip. The boundary condition is analogous to an “image charge” used inelectrostatics and is referred to herein as an imaginary heat amount. Inorder to implement the system and method, ratios of an imaginary heatamount to an actual heat amount for different locations on the IC chipmust be predetermined using a test integrated circuit (IC) chip, whichhas multiple test devices at different locations and the same packagingsolution as the IC chip at issue. During testing, one test device at onespecific location on the test IC chip can be selected to function as aheat source, while at least two other test devices at other locations onthe test IC chip function as temperature sensors. The heat source can bebiased and changes in temperature at the heat source and at the sensorscan be determined. These changes in temperature can then be used tocalculate the value of the imaginary heat amount to actual heat amountratio to be associated with the specific location. These processes canbe repeated for all of the different locations and a set of suchimaginary heat amount to actual heat amount ratios can then be stored inmemory for use in thermal modeling.

More particularly, disclosed herein is a system for modeling atemperature change of a device on a frontside of an integrated circuit(IC) chip due to self-heating, if any, and further due to thermalcoupling with another device on the frontside of the IC chip, given thepossibility of inefficient heat removal from the backside of the ICchip.

This system can comprise a memory. The memory can store a design layoutof an integrated circuit (IC) chip, which is packaged in a specific typeof chip package. The IC chip can comprise a substrate having a frontsideand a backside opposite the frontside. The IC chip can further comprisemultiple devices at different locations on the frontside of thesubstrate. The memory can further store a set of values for imaginaryheat amount to actual heat amount ratios associated with specificlocations, respectively, of potential heat sources on the front side ofthe substrate. The values for imaginary heat amount to actual heatamount ratios can vary as a function of the different locations. Thevalues for the imaginary heat amount to actual heat amount ratios in theset can, as discussed in greater detail below, be predeterminedemploying thermal potential theory and using a test integrated circuit(IC) chip packaged in the same specific type of chip package as the ICchip at issue.

The system can further comprise a processor in communication with thememory. The processor can generate, based on the design layout, athermal model that models a total change in temperature, relative to anominal temperature, of a first device on the frontside of thesubstrate. This total change in temperature of the first device can beequal to the sum of a first temperature change contribution due toself-heating of the first device, if any, and a second temperaturechange contribution due to thermal coupling with a second device and,particularly, a heat source at a specific location on the frontside ofthe substrate.

The second temperature change contribution of the second device canspecifically be calculated based on a specific imaginary heat amount toactual heat amount ratio. This specific imaginary heat amount to actualheat amount ratio can be acquired by the processor from the set ofvalues for imaginary heat amount to actual heat amount ratios stored inmemory, given the specific location of the second device. It should benoted that, given this specific imaginary heat amount to actual heatamount ratio, a specific imaginary heat amount can be found and used asa boundary condition with respect to a point off the backside of thesubstrate and, particularly, a point that is aligned vertically with thespecific location of the second device and that is separated from thebackside of the substrate by the same distance as the specific locationof the second device.

Also disclosed herein is a system for modeling a temperature change of adevice on a frontside of an integrated circuit (IC) chip due toself-heating, if any, and further due to thermal coupling with otherdevices on the frontside of the IC chip, given the possibility ofinefficient heat removal from the backside of the IC chip.

This system can similarly comprise a memory. The memory can store adesign layout of an integrated circuit (IC) chip, which is packaged in aspecific type of chip package. The IC chip can comprise a substratehaving a frontside and a backside opposite the frontside. The IC chipcan further comprise multiple devices at different locations on thefrontside of the substrate. The memory can further store a set of valuesfor imaginary heat amount to actual heat amount ratios associated withspecific locations, respectively, of potential heat sources on the frontside of the substrate. The values for the imaginary heat amount toactual heat amount ratios can vary as a function of the differentlocations. The values for the imaginary heat amount to actual heatamount ratios in the set can, as discussed in greater detail below, bepredetermined employing thermal potential theory and using a testintegrated circuit (IC) chip packaged in the same specific type of chippackage as the IC chip at issue.

The system can further comprise a processor. The processor can generate,based on the design layout, a thermal model that models a total changein temperature, relative to a nominal temperature, of a first device onthe frontside of the substrate. This total change in temperature of thefirst device can be equal to the sum of a first temperature changecontribution due to self-heating of the first device, if any, andmultiple second temperature change contributions due to thermal couplingwith multiple second devices and, particularly, multiple heat sources atspecific locations, respectively, on the frontside of the substrate.

Each second temperature change contribution can correspond to one of thesecond devices and can be calculated based on a specific imaginary heatamount to actual heat amount ratio. This specific imaginary heat amountto actual heat amount ratio can be acquired by the processor from theset of values for imaginary heat amount to actual heat amount ratiosstored in memory, given the specific location of the second device. Itshould be noted that, given this specific imaginary heat amount toactual heat amount ratio, a specific imaginary heat amount can be foundand used as a boundary condition and is predetermined with respect to apoint off the backside of the substrate and, particularly, a point thatis aligned vertically with the specific location of the second deviceand that is separated from the backside of the substrate by the samedistance as the specific location of the second device.

Also disclosed herein is a method for modeling a temperature change of adevice on a frontside of an integrated circuit (IC) chip due toself-heating, if any, and further due to thermal coupling with anotherdevice on the frontside of the IC chip, given the possibility ofinefficient heat removal from the backside of the IC chip.

The method can comprise accessing, by a processor from a memory, adesign layout and a set of values for imaginary heat amount to actualheat amount ratios. The design layout can be of an integrated circuit(IC) chip, which is packaged in a specific type of chip package. The ICchip can comprise a substrate having a frontside and a backside oppositethe frontside. The IC chip can further comprise multiple devices atdifferent locations on the frontside of the substrate. The set of valuesfor imaginary heat amount to actual heat amount ratios can comprisemultiple imaginary heat amount to actual heat amount ratios, which areassociated with specific locations, respectively, of potential heatsources on the front side of the substrate. The values for the imaginaryheat amount to actual heat amount ratios can vary as a function of thedifferent locations. The values for the imaginary heat amount to actualheat amount ratios in the set can be predetermined, as discussed ingreater detail below, employing thermal potential theory and using atest integrated circuit (IC) chip packaged in the same specific type ofchip package as the IC chip at issue.

The method can further comprise generating, by the processor based onthe design layout, a thermal model that models a total change intemperature, relative to a nominal temperature, of a first device on thefrontside of the substrate. This total change in temperature of thefirst device can be equal to the sum of a first temperature changecontribution due to self-heating of the first device, if any, and asecond temperature change contribution due to thermal coupling with asecond device and, particularly, a heat source on the frontside of thesubstrate.

The second temperature change contribution of the second device canspecifically be calculated based on a specific imaginary heat amount toactual heat amount ratio. This specific imaginary heat amount to actualheat amount ratio can be acquired by the processor from the set ofimaginary heat amount to actual heat amount ratios stored in memory,given the specific location of the second device. It should be notedthat, given this specific imaginary heat amount to actual heat amountratio, a specific imaginary heat amount can be found and used as aboundary condition with respect to a point off the backside of thesubstrate and, particularly, a point that is aligned vertically with thespecific location of the second device and that is separated from thebackside of the substrate by the same distance as the specific locationof the second device.

Also disclosed herein is a method for modeling a temperature change of adevice on a frontside of an integrated circuit (IC) chip due toself-heating, if any, and further due to thermal coupling with otherdevices on the frontside of the IC chip, given the possibility ofinefficient heat removal from the backside of the IC chip.

The method can comprise accessing, by a processor from a memory, adesign layout and a set of values for imaginary heat amount to actualheat amount ratios. The design layout can be of an integrated circuit(IC) chip, which is packaged in a specific type of chip package. The ICchip can comprise a substrate having a frontside and a backside oppositethe frontside. The IC chip can further comprise multiple devices atdifferent locations on the frontside of the substrate. The set of valuesfor imaginary heat amount to actual heat amount ratios can comprisemultiple imaginary heat amounts, which are associated with specificlocations, respectively, of potential heat sources on the front side ofthe substrate. The values for the imaginary heat amount to actual heatamount ratios can vary as a function of the different locations. Thevalues for the imaginary heat amount to actual heat amount ratios in theset can, as discussed in greater detail below, be predeterminedemploying thermal potential theory and using a test integrated circuit(IC) chip packaged in the same specific type of chip package as the ICchip at issue.

The method can further comprise generating, by the processor based onthe design layout, a thermal model that models a total change intemperature, relative to a nominal temperature, of a first device on thefrontside of the substrate. This total change in temperature of thefirst device can be equal to the sum of a first temperature changecontribution due to self-heating of the first device, if any, andmultiple second temperature change contributions due to thermal couplingwith multiple second devices and, particularly, multiple heat sources atspecific locations on the frontside of the substrate.

Each second temperature change contribution can correspond to one of thesecond devices and can be calculated based on a specific imaginary heatamount to actual heat amount ratio. This specific imaginary heat amountto actual heat amount ratio can be acquired by the processor from theset of value for imaginary heat amount to actual heat amount ratiosstored in memory, given the specific location of the second device. Itshould be noted that, given this specific imaginary heat amount toactual heat amount ratio, a specific imaginary heat amount can be foundand used as a boundary condition and is predetermined with respect to apoint off the backside of the substrate and, particularly, a point thatis aligned vertically with the specific location of the second deviceand that is separated from the backside of the substrate by the samedistance as the specific location of the second device.

As discussed above, all of the system and method embodiments for thermalmodeling disclosed herein require the use of a set of imaginary heatamounts, which are predetermined employing thermal potential theory andusing a test integrated circuit (IC) chip packaged in the same specifictype of chip package as the IC chip at issue. Thus, also disclosedherein is a method for acquiring such a set of imaginary heat amounts.

Specifically, this method can comprise providing a test integratedcircuit (IC) chip in a chip package. This test IC chip can comprise asubstrate having a frontside and a backside opposite the frontside. Thetest IC chip can further comprise test devices at different locations onthe frontside.

The method can further comprise selecting one of the test devices at aspecific location on the frontside of the substrate to be a heat sourcefor which a specific imaginary heat amount is to be calculated and atleast two other test devices at other locations on the front side of thesubstrate to be temperature sensors, wherein the temperature sensors areseparated from the heat source by different distances.

The method can further comprise biasing the heat source using a specificsupply voltage. Specifically, the supply voltage used to bias the heatsource can be a specific supply voltage that is sufficiently high toheat the heat source above the nominal temperature. It should be notedthat a second supply voltage can be used to bias the other test devices(i.e., the sensors). However, this second supply voltage should be lessthan the supply voltage used to bias the heat source and, morespecifically, should be sufficiently low so as to avoid self-heating ofthe sensors. The method can further comprise, during this biasingprocess, determining changes in temperature of the test devices (i.e.,of the heat source and of each of the sensors) relative to the nominaltemperature. The changes in temperature can be determined, for example,by measuring a performance attribute of each of the test devices (i.e.,of the heat source and of each of the sensors), wherein the value of theperformance attribute of a test device is indicative of the temperatureof that test device.

Based on the changes in temperature of the test devices, a specificimaginary heat amount that is to be associated with the specificlocation of the heat source can be determined with respect to a pointoff the backside of the substrate, wherein this point is alignedvertically with the specific location of the heat source and separatedfrom the backside of the substrate by the same distance as the specificlocation of the heat source.

The method can further comprise repeating these processes (i.e., theprocess of selecting a heat source, the process of biasing the heatsource, the process of determining the changes in temperature of theheat source and sensors, and the process of determining a specificimaginary heat amount) in order to determine specific imaginary heatamounts to be associated with each of the different locations. Then,these imaginary heat amounts can be stored in memory so that they areusable for generating thermal models of localized temperature changes ona functional integrated circuit chip. It should be noted that suchimagery heat amounts will only be usable for generating thermal modelsassociated with integrated circuit chips having a substrate with thesame thickness as that of the test IC chip and being packaged in thesame type of chip package as that used for the test IC chip.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

The present invention will be better understood from the followingdetailed description with reference to the drawings, which are notnecessarily drawn to scale and in which:

FIG. 1 is a schematic diagram illustrating a system for generatingthermal models of devices on an IC chip;

FIG. 2 is an exemplary design layout of an IC chips comprising devicesthat can be modeled using the disclosed system and method;

FIG. 3 is the design layout of FIG. 2 further showing a location of animaginary heat amount off the backside of the substrate of the IC chipand associated with a specific location of a specific heat source;

FIG. 4 is the design layout of FIG. 4 further showing multiple locationsof multiple imaginary heat amounts off the backside of the substrate ofthe IC chip and associated with different locations of different heatsources, respectively;

FIG. 5 is a flow diagram illustrating a method for generating thermalmodels of devices on an IC chip;

FIG. 6 is a flow diagram further illustrating process 506 of FIG. 5;

FIG. 7 is a flow diagram illustrating a method for acquiring values (X)for imaginary heat amount (Q^(i)) to actual heat amount (Q) ratios andcorresponding effective thermal radiuses to be associated with specificlocations on an IC chip;

FIG. 8 is a schematic diagram illustrating an exemplary test IC chipthat can be used in the method of FIG. 7;

FIG. 9 is an exemplary graph illustrating data acquired and plotted atprocesses 708-710 of FIG. 7;

FIG. 10 is an exemplary graph illustrating a curve fit at process 712 tothe data shown in the graph of FIG. 9;

FIG. 11 is another exemplary graph illustrating how the value (X) for animaginary heat amount (Q^(i)) to actual heat amount (Q) ratio will belarger or smaller depending upon the shape of the curve; and

FIG. 12 is schematic diagram illustrating a representative hardwareenvironment for implementing the system and method disclosed herein.

DETAILED DESCRIPTION

As mentioned above, the performance of a device (e.g., a field effecttransistor (FET), a bipolar transistor, a resistor, a capacitor, etc.)on an integrated circuit (IC) chip can vary as a function oftemperature. The temperature of a device can vary due to theself-heating effect (SHE). The self-heating effect refers to heatgenerated by the device itself, when active. Those skilled in the artwill recognize that there is a strong relationship between the supplyvoltage applied to a device when active and the temperature of thatdevice. The temperature of a device can also vary due to the thermalcoupling (i.e., due to the device's proximity to adjacent heatsource(s), such as adjacent device(s)). Current modeling techniquesprovide for modeling localized temperature changes due to self-heatingand due to thermal coupling with adjacent heat source(s). However,modeling of a localized temperature change due to thermal couplingtypically involves calculations of thermal resistance along thermalpathways and such calculations can be quite complex, time consuming andoftentimes inaccurate. This is particularly true when heat removal(e.g., by convection or radiation) from the backside of IC chipcontained in a package is inefficient such that the temperaturedistribution across the backside of the IC chip varies, changing theheat flow lines and, thereby changing the thermal resistances that needto be calculated. Therefore, there is a need in the art for a moreefficient technique for modeling such localized temperature changes dueto self-heating and thermal coupling.

In view of the foregoing, disclosed herein embodiments of a system andmethod for thermal modeling and, particularly, for modeling atemperature change of a device on a frontside of an integrated circuit(IC) chip due to self-heating, if any, and further due to thermalcoupling with other device(s) on the frontside of the IC chip, given thepossibility of inefficient heat removal from the backside of the ICchip. The embodiments avoid the need for calculations of thermalresistances by employing thermal potential theory. Specifically, in theembodiments, a boundary condition can be set off the backside of the ICchip. The boundary condition is analogous to an “image charge” used inelectrostatics and is referred to herein as an imaginary heat amount. Inorder to implement the system and method, ratios of an imaginary heatamount to an actual heat amount for different locations on the IC chipmust be predetermined using a test integrated circuit (IC) chip, whichhas multiple test devices at different locations and the same packagingsolution as the IC chip at issue. During testing, one test device at onespecific location on the test IC chip can be selected to function as aheat source, while the other test devices at other locations on the testIC chip function as temperature sensors. The heat source can be biasedand changes in temperature at the heat source and at the sensors can bedetermined. These changes in temperature can then be used to calculatethe value of the imaginary heat amount to actual heat amount ratio to beassociated with the specific location. These processes can be repeatedfor all of the different locations and a set of such imaginary heatamount to actual heat amount ratios can then be stored in memory for usein thermal modeling.

More particularly, those skilled in the art will recognize thatFourier's Law (also referred to as the Law of Heat Conduction) describesthe flow of heat (i.e., the flow of thermal energy) as a result of atemperature gradient and can be expressed using the following equation:

$\begin{matrix}{{\frac{Q}{t} = {{- \kappa}\; A\frac{T}{x}}},} & (1)\end{matrix}$

where κ is the thermal conductivity of the material through which thethermal conduction occurs, A is the area through which the thermalconduction occurs, and T is the temperature. Thermal capacitance (alsoreferred to as heat capacitance) refers to the heat amount (Q) held by amaterial for a certain change of temperature and can be expressed usingthe following equation:

Q=mcΔT,  (2)

where m is the mass of the body, c is the specific heat (also referredto as the specific thermal capacitance) and ΔT is the change intemperature.

Similar equations are used to define the flow of electricity andelectrical capacitance. Specifically, Ohm's Law for current density canbe expressed using the following equation:

J=1/ρ*E,  (3)

where J is the current density at a given location, ρ refers to theelectrical resistivity of the material and is the reciprocal of theelectrical conductivity (σ), and E is the electric field at the givenlocation and can be expressed using the following equation:

$\begin{matrix}{{E = {- \frac{V}{x}}},} & (4)\end{matrix}$

where V is the voltage. Additionally, electrical capacitance can beexpressed using the following equation:

q=CΔV,  (5)

where q is the stored amount of electric charge, C is the capacitanceand ΔV is the change in voltage.

Given the similarities between the above-mentioned equations related toheat and to electricity, the technique disclosed herein for thermalmodeling makes direct analogies between the variables contained in thoseequations. For example, thermal conductivity (κ) can be viewed as beinganalogous to the reciprocal of electrical resistivity (1/φ, temperature(T) can be viewed as being analogous to voltage (V) and the amount ofheat (Q) can be viewed as being analogous to the amount of electriccharge (q). Furthermore, given these analogies and the fact that bothheat flow and electric current flow follow the standard ContinuityEquation, the technique disclosed herein for thermal modeling alsoproposes that other equations, which apply to electricity andincorporate such variables as electrical resistivity (ρ) (or electricalconductivity (σ)), voltage (V) and an amount of electric charge (q), canbe rewritten to apply to heat simply by substituting in thermalconductivity (κ), temperature (T) and a heat amount (Q), respectively.For example, those skilled in the art will recognize that Laplace'sequation applies to electricity and specifically defines a change involtage (V) (i.e., a potential change) using the following equation:

$\begin{matrix}{{{\Delta \; V} = \frac{q}{r_{e}}},} & (6)\end{matrix}$

where q, as mentioned above, is an amount of electric charge and wherer_(e) is the distance from the location of the electric charge (q) to alocation in space where the change in potential (ΔV) is measured. Thislocation in space can be any location. Thus, the technique disclosedherein for thermal modeling proposes that the following equation can beused to define a change in temperature (T):

$\begin{matrix}{{{\Delta \; T} = \frac{Q}{r}},} & (7)\end{matrix}$

where Q is an amount of heat and r is the distance from the location ofthe heat amount (Q) to a location in space where the change intemperature (ΔT) is measured. This location in space can be anylocation. This equation (7) can specifically be applied to model thetemperature change of a device on a frontside of an integrated circuit(IC) chip due to self-heating, if any, and further due to thermalcoupling with other device(s) on the frontside of the IC chip. Thetechnique disclosed herein for thermal modeling further proposes thatthe method of image charges (also known as the method of images or themethod of mirror charges), which is a problem-solving tool that appliesLaplace's equation in the field of electrostatics can, withmodifications as described in detail below, be applied during suchthermal modeling to account for inefficient heat removal from thebackside of a substrate of an IC chip.

More particularly, referring to FIG. 1 disclosed herein are embodimentsof a computer system 100 for generating a thermal model representing atemperature change of a device on a frontside of an integrated circuit(IC) chip due to self-heating, if any, and further due to thermalcoupling with one or more other devices on the frontside of the IC chip.The system 100 can further provide for generating a compact model of theIC chip using the thermal model and redesigning the IC chip or the chippackage, which allows the IC chip to be incorporated into a product,based on such models.

The computer system 100 can comprise at least one memory 110 (e.g., atleast one computer readable storage medium, such as a computer readablestorage device), a user interface 150 (e.g., a graphic user interface(GUI)) and at least one processor (e.g., 130 or 130(a)-(d), see detaileddiscussion below). Components of the system 100, including theprocessor(s), memory(ies) and GUI, can be interconnected over a systembus 101, as illustrated. Alternatively, any one or more of thecomponents of the system 100 can communicate with any other componentover a wired or wireless network.

The memory 110 can store program(s) 115 of instruction for performingthe various processes described in detail below. The memory 110 canfurther store design specifications 112, including but not limited to, adesign layout 113 for an IC chip and the packaging solution (i.e., thespecific type of chip package) that will allow that IC chip to beincorporated into a product.

For example, the memory 110 can store design specifications 112 anddesign layout 113 for the exemplary IC chip 200, as shown in FIG. 2,including a packaging solution (i.e., a specific type of chip package)that will allow the IC chip 200 to be incorporated into a product. Asshown in FIG. 2, the IC chip 200 is mounted on a chip carrier 291 (e.g.,an organic laminate substrate) of a chip package 290. The IC chip 200comprises a substrate 201 having a given thickness 205, a frontside 202upon which various devices 210(a)-(d) are formed and a backside 203opposite the frontside 202. For illustration purposes, four devices areshown; however, it should be understood that any number of two or moredevices may be formed on the frontside 202 of the substrate 201. Thedevices 210(a)-(d) can comprise active devices (e.g., field effecttransistors, bipolar transistors, etc. and/or passive devices (e.g.,resistors, capacitors, inductors, etc.). The devices 210(a)-(d) canfurther be covered with interlayer dielectric material and back end ofthe line (BEOL) metal wiring levels 280 that allow for interconnectionsbetween the device and also with the chip carrier 291. For purposes ofillustration, the IC chip package 290 is shown as a “flip chip package”.That is, the IC chip 200 is mounted on the chip carrier 291 with thefrontside 202 of the substrate 201 facing the chip carrier 291 andsolder joints 292 electrically connecting the metal wiring levels 280 tothe chip carrier 291. A lid 293 covers the IC chip 200 and is alsoattached to the chip carrier 291. Optionally, a thermal compound (e.g.,thermal paste, gel or grease) can fill the gap between the lid 293 andthe backside 203 of the substrate 201 for purposes of heat removal.Alternatively, the IC chip package 290 can be a standard package (notshown) with the IC chip 200 mounted on the chip carrier 291 such thatthe backside of the IC chip 200 faces the chip carrier 291 and such thatwires are used to make the required connection between the BEOL metalwiring levels 280 and the chip carrier 290. In any case, the IC chippackage 290 can further be configured for attachment to a printedcircuit board (PCB). That is, the flip-chip (or standard) IC chippackage 290 can be configured as a through-hole package (e.g., a singlein-line package, a dual-in line package, etc.) or, alternatively, as asurface mount package that provides the appropriate features forconnection to a PCB.

The memory 110 can further store characterization information 114 forthe various devices 210(a)-(d) on the IC chip. The characterizationinformation 114 can include, but is not limited to self-heatingcharacterization information associated with each of the devices210(a)-(d), as discussed in greater detail below.

The memory 110 can further store a set 111 of values (X) for imaginaryheat amount (Q^(i)) to actual heat amount (Q) ratios and correspondingeffective thermal radiuses (r₀). The imaginary heat amounts (Q^(i)) inthe ratios can be analogous to “image charges” used for problem solvingin electrostatics. Those skilled in the art will recognize that the term“image charge” refers to an imaginary charge that is placed, forpurposes of establishing a boundary condition, on one side of aconductive plate opposite an actual charge. The actual charge and “imagecharge” are equidistance from the conductive plate and the “imagecharge” mirrors the actual charge (i.e., is the polar opposite of anactual) such that the potential along the conductive plate must be zero.As discussed in greater detail below, in the technique for thermalmodeling disclosed herein imaginary heat amounts (Q^(i)) will similarlybe placed, for purposes of establishing a boundary condition, off thebackside 203 of the substrate 201 of the IC chip 200 opposite an actualheat amount (Q) from a heat source. However, unlike image charges thatmirror actual charges, these imaginary heat amounts (Q^(i)) will notnecessarily mirror the actual heat amounts (Q) from the heat sourcesbecause of inefficient heat removal from the backside 203 of thesubstrate of the IC chip 200. Thus, the values (X) for imaginary heatamount (Q^(i)) to actual heat amount (Q) ratios in the set 111 must bepredetermined using a test integrated circuit (IC) chip packaged in thesame specific type of chip package as the IC chip 200 at issue andhaving the same substrate thickness (t) as the IC chip 200 at issue (seeFIG. 7 and the detailed discussion below regarding the method foracquiring the values (X) for imaginary heat amount (Q^(i)) to actualheat amount (Q) ratios and corresponding effective thermal radiuses tobe associated with specific locations on an IC chip).

In any case, the values (X) for imaginary heat amount (Q^(i)) to actualheat amount (Q) ratios and the corresponding effective thermal radiuses(r₀) in the set 111 can be associated with specific locations,respectively, of potential heat sources on the front side of thesubstrate. Specifically, each value (X) for an imaginary heat amount(Q^(i)) to actual heat amount (Q) ratio and corresponding effectivethermal radius (r₀) can be associated with a specific location on thefrontside of the substrate and can be predetermined with respect to apoint for the imaginary heat amount (Q^(i)), which is off the backsideof the substrate, aligned vertically with the specific location andseparated from the backside of the substrate by the same distance as thespecific location. It should be understood that a value (X) of animaginary heat amount (Q^(i)) to actual heat amount (Q) ratio that isassociated with a specific location indicates that the imaginary heatamount (Q^(i)) for that specific location will be some multiple X of theactual heat amount (Q) at the heat source at that specific location uponbiasing. That is:

Q ^(i) =XQ.  (8)

It should further be understood that the imaginary heat amount (Q^(i))for a specific location will only be a mirror heat amount (i.e., willonly be equal to −1*Q) when an area at the backside 203 of the substrate201 and aligned vertically and equidistance between the heat source andthe location of the imaginary heat amount (Q^(i)) is at the nominaltemperature. Additionally, it should be noted that laboratory testinghas shown that the thicker wafers (i.e., thicker substrates) tend tothermally couple to thermal chucks better than thinner wafers (i.e.,thinner substrates and, thereby that the value (X) of the ratio Q^(i)/Q,which indicates the relationship between the imaginary heat amount(Q^(i)) and the actual heat amount (Q) for a particular location, willvary as a function of the thickness 205 of the substrate 201 and,particularly, will increase as the thickness of the substrate decreases.For example, in our laboratory testing we observe, for a substrate thatis approximately 750 μm thick the value (X) of the ratio can be 4 (i.e.,Q^(i)/Q=+4), whereas for a substrate that is approximately 100 μm thickthe value (X) of the ratio can be 7.5 (i.e., Q^(i)/Q=+7.5). Thus, asdiscussed in greater detail below with regard to the method foracquiring the values (X) for the imaginary heat amount (Q^(i)) to actualheat amount (Q) ratios, these values must be acquired using a test ICchip with the same configuration (e.g., substrate thickness, chippackaging, etc.) as the IC chip at issue.

As mentioned above, the computer system 100 can comprise at least oneprocessor. Specifically, the computer system 100 can comprise a singlespecialized processor 130 (e.g., a single specialized computerprocessing unit) that, during IC design, performs (i.e., that is adaptedto perform, that is configured to perform and/or that executes multipleprograms of instructions 115 to perform) multiple process steps, asdescribed in detail below. Alternatively, the computer system 100 cancomprise multiple specialized processors 130(a)-(c) (e.g., multipledifferent specialized computer processing units) and, during IC design,each processor can perform (i.e., can be adapted to perform, can beconfigured to perform and/or can execute one or more specific programsof instructions 115 to perform) one or more of the multiple processsteps, as described in detail below. For purposes of illustration, threedifferent special purpose processor(s) are shown in FIG. 1 including athermal model generator 130(a), a compact model generator 130(b) and adesign editor 130(c). It should be understood that FIG. 1 is notintended to be limiting and, alternatively, the multiple process steps,as described in detail below, can be performed by any number of one ormore processors.

The computer system 100 can receive, e.g., from a user through the userinterface 150, one or more inputs initiating thermal modeling withrespect to a first device (e.g., device 210(a)) on the frontside 202 ofthe substrate 201 of the IC chip 200. Following receipt of the inputs,the processor 130 (or, if applicable, the thermal model generator130(a)) can generate (i.e., can be adapted to generate, can beconfigured to generate, can execute a program 115 of instructions togenerate, etc.) a thermal model that represents a total change intemperature of the first device 210(a), relative to a nominaltemperature. Generation of such a thermal model can be based ongeometric properties acquired from the design layout 113 and furtherbased on one or more of the predetermined imaginary heat amountsselected from the set(s) 111 of predetermined imaginary heat amountsstored in memory 110.

Specifically, the processor 130 (or, if applicable the thermal modelgenerator 130(a)) can acquire, from the design layout 113, geometricproperties associated with the IC chip 200, with the first device 210(a)and with any second devices (e.g., devices 210(b)-(d)) that are also onthe frontside 202 of the substrate 201 and that may thermally couplewith the first device 210(a) during operation of the IC chip 200 so asto alter the temperature of the first device 210(a). The geometricproperties can comprise at least the thickness (t) 205 of the substrate201 of the IC chip 200 and first distances (r₁) between the center ofthe first device 210(a) and the centers of each of the second devices(e.g., devices 210(b)-(d)), respectively.

It should be noted that, optionally, the processor 130 (or, ifapplicable the thermal model generator 130(a)) can determine if any ofthe first distances (r₁) between the center of the first device 210(a)and the center of any of the second devices (e.g., the first distancebetween the center of the first device 210(a) and the center of thesecond device 210(b), the first distance between the center of the firstdevice 210(a) and the center of the second device 210(c), or the firstdistance between the center of the first device 210(a) and the center ofthe second device 210(d)) are greater than a predetermined thresholddistance required for thermal coupling and can remove from furtherconsideration any second device that is separated from the first deviceby a first distance that is greater than the predetermined thresholddistance. For example, if the first distances between the center of thefirst device 210(a) and the centers of both of the second devices 210(c)and 210(d) are greater than the predetermined threshold distance, thenboth of the second devices 210(c) and 210(d) can be removed from furtherconsideration. In this case, only the second device 210(b) would beconsidered as a heat source during thermal modeling of the first device210(a). However, if only the first distance between the center of thefirst device 210(a) and the center of the second device 210(d) isgreater than the predetermined threshold distance, then only the seconddevice 210(d) would be removed from further consideration. In this case,both the second devices 210(b) and 210(c) would still be considered heatsources during thermal modeling of the first device 210(a).

For the case where only one heat source (e.g., the second device 210(b))is to be considered during thermal modeling of the device 210(a), theprocessor 130 (or, if applicable, the thermal model generator 130(a))can calculate the total change in temperature of the first device 210(a)(ΔT_(1T)) as the sum of a first temperature change contribution due toself-heating of the first device 210(a), if any, and a secondtemperature change contribution due to thermal coupling with the seconddevice 210(b) as illustrated by the following equation:

ΔT _(1T) =ΔT _(1SH) +ΔT _(1TC-2),  (9)

where ΔT_(1SH) is a first temperature change contribution to the totalchange in temperature of the first device 210(a) due to self-heating ofthe first device 210(a) and ΔT_(1TC-2) is the second temperature changecontribution to the total change in temperature of the first device210(a) due to thermal coupling with the second device 210(b).

The first temperature change contribution (ΔT_(1SH)) to the total changein temperature of the first device 210(a) due to self-heating of thefirst device 210(a) can be determined using device characterizationtechniques. Techniques used to characterize self-heating of a device(i.e., temperature changes of a device due to self-heating) based onperformance are well known in the art. For example, atemperature-dependent performance attribute of a device (e.g.,resistance of a resistor or any other temperature-dependent performanceattribute of any other device) on a wafer can be measured at ambienttemperature under low biasing conditions such that self-heating does notoccur. Subsequently, the entire wafer can be heated (e.g., using athermal chuck), thereby allowing the temperature-dependent performanceattribute to be measured at one or more higher temperatures. Differentperformance measurements can be associated with different temperaturesand stored in memory.

Subsequently, by measuring the performance of the device, thetemperature can be determined.

The second temperature change contribution (ΔT_(1TC-2)) to the totalchange in temperature of the first device 210(a) due to thermal couplingwith the second device 210(b) can be calculated, as described in detailbelow, based on the change in temperature of the second device 210(b)due to self-heating (ΔT_(2SH)) and by applying a technique similar tothe method of image charges. More specifically, the second temperaturechange contribution (ΔT_(1TC-2)) to the total change in temperature ofthe first device 210(a) due to thermal coupling with the second device210(b) can be calculated based on self-heating of the second device210(b) (ΔT_(2SH)), which can be determined using device characterizationtechniques described above, and also based on a value (X) for a specificimaginary heat amount (Q^(i)) to actual heat amount (Q) ratio and acorresponding effective thermal radius (r₀), using equations (10)-(15)described in detail below.

A value (X) for a specific imaginary heat amount (Q^(i)) to actual heatamount (Q) ratio and the corresponding effect thermal radius (r₀) can beacquired by the processor 130 (or, if applicable, the thermal modelgenerator 130(a)) from the set 111 stored in memory 110, given thespecific location of the second device 210(b) on the IC chip. Given thisvalue (X) for the specific imaginary heat amount (Q^(i)) to actual heatamount (Q) ratio and the corresponding effect thermal radius (r₀)associated with the specific location of the second device 210(b), aspecific imaginary heat amount (Q^(i)) can used as a boundary conditionat the specific point, as illustrated in FIG. 3, which is off thebackside 203 of the substrate 201, aligned vertically with the center ofthe second device 210(b) and separated from the backside 203 of thesubstrate 201 by the same distance as the specific location of thespecific second device 210(b). Specifically, the location of the firstdevice 210(a) on the frontside of the substrate, the location of thesecond device 210(b) on the frontside of the substrate, and the locationof the point off the backside of the substrate form a right triangle. Inthis right triangle, the centers of the first device 210(a) and thesecond device 210(b) are separated by the first distance (r₁), thecenters of the point and the first device 210(a) are separated by asecond distance (r₂), and the centers the second device 210(b) and thepoint are separated by a third distance (r₃). As mentioned above, thespecific location of the second device 210(b) and the location of thepoint can each be separated from the backside 203 of the substrate 201by the same distance. Since the specific location of the second device210(b) is on the frontside 202 of the substrate 201, it is separatedfrom the backside 203 of the substrate 201 by a distance that is equalto the thickness 205 of the substrate 201. Since the specific locationof the second device 210(b) and the location of the point off thebackside of the substrate are separated from the backside 203 of thesubstrate 201 by the same distance, the processor 130 (or, ifapplicable, the thermal model generator 130(a)) can calculate that thirddistance (r₃) as being equal to two times the thickness 205 of thesubstrate 201. Furthermore, the processor 130 (or, if applicable, thethermal model generator 130(a)) can calculate the second distance (r₂)between the first device 210(a) and the point off the backside of thesubstrate, using the equations (10)-(11) below:

r ₂ ² =r ₁ ² +r ₃ ², and  (10)

r ₂=√{square root over (r ₁ ² +r ₃ ²)},=√{square root over (r ₁ ²+4*t²)}.  (11)

The processor 130 (or, if applicable, the thermal model generator130(a)) can then calculate the second temperature change contribution(ΔT_(1TC-2)) to the total change in temperature of the first device210(a) due to thermal coupling with the second device 210(b) usingequations (12)-(15) below. Specifically, equation (12) indicates thatthe second temperature change contribution (ΔT_(1TC-2)) to the totalchange in temperature of the first device 210(a) due to thermal couplingwith the second device 210(b) will be equal to the sum of a first ratioof the heat amount (Q₂) at the second device 210(b) over the firstdistance (r₁) and a second ratio of the specific imaginary heat amount(Q^(i)) over the second distance (r₂). That is,

$\begin{matrix}{{\Delta \; T_{{1{TC}} - 2}} = {\frac{Q_{2}}{r_{1}} + {\frac{Q^{i}}{r_{2}}.}}} & (12)\end{matrix}$

Equation (12) can be simplified as follows given equation (8) above:

$\begin{matrix}\begin{matrix}{{\Delta \; T_{{1{TC}} - 2}} = {\frac{Q_{2}}{r_{1}} + {X*\frac{Q_{2}}{\sqrt{r_{1}^{2} + {4*t^{2}}}}}}} \\{= {Q_{2}*{\left( {\frac{1}{r\; 1} + \frac{X}{\sqrt{r_{1}^{2} + {4*t^{2}}}}} \right).}}}\end{matrix} & (13)\end{matrix}$

Equation (13) can further simplified as follows in order to eliminatethe need to actually find the amount of heat (Q₂) at the second device210(b) or the imaginary heat amount (Q^(i)) at the point off thebackside of the substrate:

$\begin{matrix}{\mspace{79mu} {{{\Delta \; T_{2{SH}}} = {Q_{2}*\left( {\frac{1}{r_{0}} + \frac{X}{\sqrt{r_{0}^{2} + {4*t^{2}}}}} \right)}},{and}}} & (14) \\{\left. {{\Delta \; T_{{1{TC}} - 2}} = {\Delta \; T_{2{SH}}*{\left( {\frac{1}{r_{1}} + \frac{X}{\sqrt{r_{1}^{2} + {4*t^{2}}}}} \right)/\left( {\frac{1}{r_{0}} + \frac{X}{\sqrt{r_{0}^{2} + {4*t^{2}}}}} \right)}}} \right),} & (15)\end{matrix}$

where r₀ is the effective thermal radius of that second device 210(b).It should be noted that in solving equation (15) the value for theeffective thermal radius (r₀) should be predetermined so that equation(14) is valid and, thereby so that the self-heating of the heat source(i.e., the second device 210(b)) follows the thermal potential theory inthat it is the increase in temperature due to an amount of heat (Q₂) atthat heat source.

For the case where multiple heat sources (e.g., the second device 210(b)and the second device 210(c)) are to be considered during thermalmodeling of the device 210(a), the processor 130 (or, if applicable, thethermal model generator 130(a)) can calculate the total change intemperature of the first device 210(a) (ΔT_(1T)) as the sum of a firsttemperature change contribution due to self-heating of the first device210(a), if any, and second temperature change contributions due tothermal coupling with each of the second devices (e.g., second devices210(b) and 210(c)), respectively, as illustrated by the followingequation:

ΔT _(1T) =ΔT _(1SH) +ΣΔT _(1TC-n),  (16)

where ΔT_(1SH) is a first temperature change contribution to the totalchange in temperature of the first device 210(a) due to self heating ofthe first device 210(a) and each ΔT_(1TC-n) is a second temperaturechange contribution to the total change in temperature of the firstdevice 210(a) due to thermal coupling with a given second device.

The first temperature change contribution (ΔT_(1SH)) can be calculatedin the same manner as described in detail above (e.g., using devicecharacterization techniques).

Each second temperature change contribution (ΔT_(1TC-n)) can becalculated by the processor 130 (or, if applicable, the thermal modelgenerator 130(a)) in isolation. That is, each second temperature changecontribution (ΔT_(1TC-n)) associated with each second device 210(b) and210(c) at issue (i.e., ΔT_(1TC-210(b)) and ΔT_(1TC-210(c))) can becalculated by the processor 130 (or, if applicable, the thermal modelgenerator 130(a)) independently of the contribution from any othersecond device. Thus, referring to FIG. 4, a second temperature changecontribution to the total change in temperature of the first device210(a) due to thermal coupling with the second device 210(b)(ΔT_(1TC-210(b))) can be calculated in the exact same manner, asdescribed above, using equations (9)-(15). Then, an additional secondtemperature change contribution to the total change in temperature ofthe first device 210(a) due to thermal coupling with the second device210(c) (ΔT_(1TC-210(c))) can be calculated in essentially the samemanner. However, it should be understood that the values for the seconddistance (r₂) and the specific imaginary heat amount to actual heatamount ratio that are used to calculate this additional secondtemperature change contribution (ΔT_(1TC-210(c))) from the second device210(c) may be different than the values for the second distance (r₂) andthe specific imaginary heat amount to actual heat amount ratio that wereused to calculate the second temperature contribution (ΔT_(1TC-210(b)))from the second device 210(b). The second distances will be differentif, as illustrated in FIG. 4, the first distances (r₁) between thecenter of the first device 210(a) and the centers of the second devices210(b) and 210(c) are different. The specific imaginary heat amount toactual heat amount ratios associated with the specific locations of thesecond devices 210(b) and 210(c), respectively, may be differentdepending upon the specific locations of those devices on the frontsideof the substrate (see the flow diagram of FIG. 7 and the detaileddiscussion thereof below).

The processor 130 (or, if applicable, the thermal model generator130(a)) can iteratively repeat the above-described processes to generatethermal models for each of the devices 210(a)-210(d) on the frontside202 of the IC chip 200.

Next, the processor 130 (or, if applicable, the compact model generator130(b)) can generate (i.e., can be adapted to generate, can beconfigured to generate, can execute a program 115 of instructions togenerate, etc.) a compact model that models the performance of IC chip200 using such thermal models.

Based on the modeled performance of the IC chip 200, as indicated by thecompact model, the processor 130 (or, if applicable, the design editor130(c)) can make adjustments to the design specifications 112 of the ICchip 200, including to the design layout 113 of the IC chip 200 and/orto the packaging solution for that IC chip 200. For example, theprocessor 130 (or, if applicable, the design editor 130(c)) can adjustthe layout of the devices 210(a)-(d) on the IC chip 200, moving thedevices closer together or farther apart in order to adjust theoperating temperature of the one or more of the devices and, thereby toadjust the performance of one or more of the devices. Additionally oralternatively, the processor 130 (or, if applicable, the design editor130(c)) can change the specification for the thickness 205 of thesubstrate 201 of the IC chip 200, making it thicker or thinner in orderto adjust the operating temperature of the one or more of the devicesand, thereby to adjust the performance of one or more of the devices.Additionally or alternatively, the processor 130 (or, if applicable, thedesign editor 130(c)) can change the specifications for the chippackage, making it a more or less effective heat sink in order to adjustthe operating temperature of the one or more of the devices and, therebyto adjust the performance of one or more of the devices.

The processor 130 (or, if applicable, the thermal model generator130(a), compact model generator 130(b) and design editor 130(c)) caniteratively repeat the above-described processes in order to generate afinal design for the IC chip 200. The IC chip 200 can subsequently bemanufactured according to the final design.

Referring to the flow diagram of FIG. 5 in combination with FIG. 1, alsodisclosed herein are embodiments of a method for generating a thermalmodel representing a temperature change of a device on a frontside of anintegrated circuit (IC) chip due to self-heating, if any, and furtherdue to thermal coupling with one or more other devices on the frontsideof the IC chip. The method can further provide for generating a compactmodel of the IC chip using the thermal model and redesigning the IC chipor the chip package, which allows the IC chip to be incorporated into aproduct, based on such models.

The method can comprise storing, in at least one memory 110 (e.g., atleast one computer readable storage medium, such as a computer readablestorage device), program(s) and information required for implementingthe method (502). Specifically, the method can comprise storing, in thememory 110, program(s) 115 of instruction for performing the variousprocesses described in detail below. The method can comprise storing, inthe memory 110, design specifications 112, including but not limited to,a design layout 113 for an IC chip and the packaging solution (i.e., thespecific type of chip package) that will allow that IC chip to beincorporated into a product (e.g., see the exemplary IC chip 200 shownin FIG. 2 and described in detail above with regard to the systemembodiments). The method can comprise storing, in the memory 110,characterization information 114 for the various devices 210(a)-(d) onthe IC chip. The characterization information 114 can include, but isnot limited to self-heating characterization information associated witheach of the devices 210(a)-(d), as discussed in greater detail below.The method can comprise storing, in the memory 110, a set 111 of values(X) for imaginary heat amount (Q^(i)) to actual heat amount (Q) ratiosand corresponding effective thermal radiuses (r₀).

In the technique for thermal modeling disclosed herein imaginary heatamounts (like “image charges”) will be placed, for purposes ofestablishing a boundary condition, off the backside 203 of the substrate201 of the IC chip 200 opposite an actual heat amount (Q) from a heatsource. However, unlike image charges that mirror actual charges, theseimaginary heat amounts will not necessarily mirror the actual heatamounts from the heat sources because of inefficient heat removal fromthe backside 203 of the substrate of the IC chip 200. Thus, the valuesof the imaginary heat amount to actual heat amount ratios that arestored in memory 110 must be predetermined using a test integratedcircuit (IC) chip packaged in the same specific type of chip package asthe IC chip 200 at issue and having the same substrate thickness (t) asthe IC chip 200 at issue (see FIG. 7 and the detailed discussion belowregarding the method for acquiring imaginary heat amounts).

In any case, the values (X) for imaginary heat amount (Q^(i)) to actualheat amount (Q) ratios and the corresponding effective thermal radiuses(r₀) in the set 111 can be associated with specific locations,respectively, of potential heat sources on the front side of thesubstrate. Specifically, each value (X) for an imaginary heat amount(Q^(i)) to actual heat amount (Q) ratio and corresponding effectivethermal radius (r₀) can be associated with a specific location on thefrontside of the substrate and can be predetermined with respect to apoint for the imaginary heat amount (Q^(i)), which is off the backsideof the substrate, aligned vertically with the specific location andseparated from the backside of the substrate by the same distance as thespecific location. It should be understood that a value (X) of animaginary heat amount (Q^(i)) to actual heat amount (Q) ratio that isassociated with a specific location indicates that the imaginary heatamount (Q^(i)) for that specific location will be some multiple X of theactual heat amount (Q) at the heat source at that specific location uponbiasing (see equation (8) above). It should further be understood thatthe imaginary heat amount (Q^(i)) for a specific location will only be amirror heat amount (i.e., will only be equal to −1*Q) when an area atthe backside 203 of the substrate 201 and aligned vertically andequidistance between the heat source and the location of the imaginaryheat amount (Q^(i)) is at the nominal temperature. Additionally, itshould be noted that laboratory testing has shown that the thickerwafers (i.e., thicker substrates) tend to thermally couple to thermalchucks better than thinner wafers (i.e., thinner substrates and, therebythat the value (X) of the ratio Q^(i)/Q, which indicates therelationship between the imaginary heat amount (Q^(i)) and the actualheat amount (Q) for a particular location, will vary as a function ofthe thickness 205 of the substrate 201 and, particularly, will increaseas the thickness of the substrate decreases. For example, in ourlaboratory testing we observe, for a substrate that is approximately 750μm thick the value (X) of the ratio can be 4 (i.e., Q^(i)/Q=+4), whereasfor a substrate that is approximately 100 μm thick the value (X) of theratio can be 7.5 (i.e., Q^(i)/Q=+7.5). Thus, as discussed in greaterdetail below with regard to the method for acquiring the values (X) forthe imaginary heat amount (Q^(i)) to actual heat amount (Q) ratios,these values must be acquired using a test IC chip with the sameconfiguration (e.g., substrate thickness, chip packaging, etc.) as theIC chip at issue.

The method can comprise receiving, e.g., from a user through the userinterface 150, one or more inputs initiating thermal modeling withrespect to a first device (e.g., device 210(a)) on the frontside 202 ofthe substrate 201 of the IC chip 200 (504). Following receipt of theinputs, the method can comprise generating, e.g., by a processor 130 or,if applicable, by a thermal model generator 130(a), a thermal model thatrepresents a total change in temperature of the first device 210(a),relative to a nominal temperature (506). Generation of such a thermalmodel at process 506 can be based on geometric properties acquired fromthe design layout 113 and further based on one or more of thepredetermined imaginary heat amount to actual heat amount ratios andcorresponding thermal radiuses selected from the set 111.

FIG. 6 is a flow diagram that describes in greater detail the processesused to generate a thermal model at process 506. For illustrationpurposes, these processes are described below with respect to the firstdevice 210(a) on the frontside 202 of the substrate 201 of the IC chip200 of FIG. 2. To generate such a thermal model, geometric properties,which are associated with the IC chip 200, with the first device 210(a)and with any second devices (e.g., devices 210(b)-(d)) that are also onthe frontside 202 of the substrate 201 and that may thermally couplewith the first device 210(a) during operation of the IC chip 200 so asto alter the temperature of the first device 210(a), can be acquiredfrom the design specifications 112, including the design layout 113, inthe memory 110 (602). The geometric properties can comprise at least thethickness (t) 205 of the substrate 201 of the IC chip 200 and firstdistances (r₁) between the first device 210(a) and each of the seconddevices (e.g., devices 210(b)-(d)), respectively.

Optionally, a determination can be made (e.g., by the processor 130 or,if applicable, by the thermal model generator 130(a)) as to whether anyof first distances (r₁) between the center of the first device 210(a)and the centers of any of the second devices (e.g., the first distancebetween the center of the first device 210(a) and the center of thesecond device 210(b), the first distance between the center of the firstdevice 210(a) and the center of the second device 210(c), or the firstdistance between the center of the first device 210(a) and the center ofthe second device 210(d)) are greater than a predetermined thresholddistance required for thermal coupling and can remove from furtherconsideration any second device that is separated from the first deviceby a first distance that is greater than the predetermined thresholddistance (604). For example, if the first distances between the centerfirst device 210(a) and the centers of both of the second devices 210(c)and 210(d) are greater than the predetermined threshold distance, thenboth of the second devices 210(c) and 210(d) can be removed from furtherconsideration. In this case, only the second device 210(b) would beconsidered as a heat source during thermal modeling of the first device210(a). However, if only the first distance between the center of thefirst device 210(a) and the center of the second device 210(d) isgreater than the predetermined threshold distance, then only the seconddevice 210(d) would be removed from further consideration. In this case,both the second devices 210(b) and 210(c) would still be considered heatsources during thermal modeling of the first device 210(a).

Next, the total change in temperature of the first device 210(a) can becalculated (606). For the case where a single heat sources (e.g., thesecond device 210(b)) thermally couples with the first device 210(a),the total change in temperature of the first device 210(a) (ΔT_(1T)) canbe calculated as the sum of a first temperature change contribution dueto self-heating of the first device 210(a), if any, and a secondtemperature change contribution due to thermal coupling with the seconddevice 210(b), as illustrated by equation (9) and discussed in detailabove.

The first temperature change contribution (ΔT_(1SH)) to the total changein temperature of the first device 210(a) due to self-heating of thefirst device 210(a), if any, can be calculated in the same manner asdescribed in detail above (e.g., using device characterizationtechniques).

The second temperature change contribution (ΔT_(1TC-2)) to the totalchange in temperature of the first device 210(a) due to thermal couplingwith the second device 210(b) can be calculated, as described in detailabove, based on the change in temperature of the second device 210(b)due to self-heating (ΔT_(2SH)) and by applying a technique similar tothe method of image charges. More specifically, the second temperaturechange contribution (ΔT_(1TC-2)) to the total change in temperature ofthe first device 210(a) due to thermal coupling with the second device210(b) can be calculated based on self-heating of the second device210(b) (ΔT_(2SH)), which can be determined using device characterizationtechniques described above, and also based on a value (X) for a specificimaginary heat amount (Q^(i)) to actual heat amount (Q) ratio and acorresponding effective thermal radius (r₀), using equations (10)-(15).

That is, a value (X) for a specific imaginary heat amount (Q^(i)) toactual heat amount (Q) ratio and the corresponding effect thermal radius(r₀) can be acquired (e.g., by the processor 130 or, if applicable, bythe thermal model generator 130(a)) from the set 111 stored in memory110, given the specific location of the second device 210(b) on the ICchip. Given this value (X) for the specific imaginary heat amount(Q^(i)) to actual heat amount (Q) ratio and the corresponding effectthermal radius (r₀) associated with the specific location of the seconddevice 210(b), a specific imaginary heat amount (Q^(i)) can used as aboundary condition at the specific point, as illustrated in FIG. 3,which is off the backside 203 of the substrate 201, aligned verticallywith the center of the second device 210(b) and separated from thebackside 203 of the substrate 201 by the same distance as the specificlocation of the specific second device 210(b). Specifically, thelocation of the first device 210(a) on the frontside of the substrate,the location of the second device 210(b) on the frontside of thesubstrate, and the location of the point off the backside of thesubstrate form a right triangle. In this right triangle, the centers ofthe first device 210(a) and the second device 210(b) are separated bythe first distance (r₁), the centers of the point and the first device210(a) are separated by a second distance (r₂), and the centers thesecond device 210(b) and the point are separated by a third distance(r₃). As mentioned above, the specific location of the second device210(b) and the location of the point can each be separated from thebackside 203 of the substrate 201 by the same distance. Since thespecific location of the second device 210(b) is on the frontside 202 ofthe substrate 201, it is separated from the backside 203 of thesubstrate 201 by a distance that is equal to the thickness 205 of thesubstrate 201. Since the specific location of the second device 210(b)and the location of the point off the backside of the substrate areseparated from the backside 203 of the substrate 201 by the samedistance, that third distance (r₃) can be calculated (e.g., by theprocessor 130 or, if applicable, by the thermal model generator 130(a))as being equal to two times the thickness 205 of the substrate 201.Furthermore, the second distance (r₂) between the first device 210(a)and the point off the backside of the substrate can be calculated (e.g.,by the processor 130 or, if applicable, by the thermal model generator130(a)) using the equations (10)-(11) discussed in detail above withregard to the system.

Next, the second temperature change contribution (ΔT_(1TC-2)) to thetotal change in temperature of the first device 210(a) due to thermalcoupling with the second device 210(b) can be calculated (e.g., by theprocessor 130 or, if applicable, by the thermal model generator 130(a))using equations (12)-(15) below. Specifically, equation (12) indicatesthat the second temperature change contribution (ΔT_(1TC-2)) to thetotal change in temperature of the first device 210(a) due to thermalcoupling with the second device 210(b) will be equal to the sum of afirst ratio of the heat amount (Q₂) at the second device 210(b) over thefirst distance (r₁) and a second ratio of the specific imaginary heatamount (Q^(i)) over the second distance (r₂). As described in detailabove, equation (12) is further simplified into equation (13) usingequation (8) and equation (13) is further simplified into equation (15),thereby eliminating the need to actually find the amount of heat (Q₂) atthe second device 210(b) or the imaginary heat amount (Q^(i)) at thepoint off the backside of the substrate, when the value (X) for thespecific imaginary heat amount (Q^(i)) to actual heat amount (Q) ratioand the corresponding effective thermal radius (r₀) associated with thespecific location of the second device 210(b) are known.

For the case where multiple heat sources (e.g., the second device 210(b)and the second device 210(c)) thermally couple with the first device210(a), the total change in temperature of the first device 210(a)(ΔT_(1T)) can be calculated as the sum of a first temperature changecontribution due to self-heating of the first device 210(a), if any, andsecond temperature change contributions due to thermal coupling witheach of the second devices (e.g., second devices 210(b) and 210(c)),respectively, as illustrated by equation (16) and discussed in detailabove.

The first temperature change contribution (ΔT_(1SH)) to the total changein temperature of the first device 210(a) due to self-heating of thefirst device 210(a), if any, can be calculated in the same manner asdescribed in detail above (e.g., using device characterizationtechniques).

Each second temperature change contribution (ΔT_(1TC-n)) can becalculated in isolation. That is, each second temperature changecontribution (ΔT_(1TC-n)) associated with each second device 210(b) and210(c) at issue (i.e., ΔT_(1TC-210(b)) and ΔT_(1TC-210(c))) can becalculated independently of the contribution from any other seconddevice. Thus, referring to FIG. 4, a second temperature changecontribution to the total change in temperature of the first device210(a) due to thermal coupling with the second device 210(b)(ΔT_(1TC-210(b))) can be calculated in the exact same manner, asdescribed above, using equations (9)-(15). Then, an additional secondtemperature change contribution to the total change in temperature ofthe first device 210(a) due to thermal coupling with the second device210(c) (ΔT_(1TC-210(c))) can be calculated in essentially the samemanner. However, it should be understood that the values for the seconddistance (r₂) and the specific imaginary heat amount to actual heatamount ratio that are used to calculate this additional secondtemperature change contribution (ΔT_(1TC-210(c))) from the second device210(c) may be different than the values for the second distance (r₂) andthe specific imaginary heat amount to actual heat amount ratio that wereused to calculate the second temperature contribution (ΔT_(1TC-210(b)))from the second device 210(b). The second distances will be differentif, as illustrated in FIG. 4, the first distances (r₁) between thecenter of the first device 210(a) and the centers of the second devices210(b) and 210(c) are different. The specific imaginary heat amount toactual heat amount ratios associated with the specific locations of thesecond devices 210(b) and 210(c), respectively, may be differentdepending upon the specific locations of those devices on the frontsideof the substrate (see the flow diagram of FIG. 7 and the detaileddiscussion thereof below).

Referring again to FIG. 5, the processes described above and set forthin FIG. 6 can be iteratively repeated (e.g., by the processor 130 or, ifapplicable, by the thermal model generator 130(a)) to generate thermalmodels for each of the devices 210(a)-210(d) on the frontside 202 of theIC chip 200.

Next, a compact model that models the performance of the IC chip 200 canbe generated (e.g., by the processor 130 or, if applicable, by thecompact model generator 130(b)) (508). This compact model canspecifically be generated using the thermal models generated at process506.

Based on the modeled performance of the IC chip 200, as indicated by thecompact model, adjustments can be made (e.g., by the processor 130 or,if applicable, by the design editor 130(c)) to the design specifications112 of the IC chip 200, including to the design layout 113 of the ICchip 200 and/or to the packaging solution for that IC chip 200 (510).For example, the layout of the devices 210(a)-(d) on the IC chip 200 canbe adjusted, moving the devices closer together or farther apart inorder to adjust the operating temperature of the one or more of thedevices and, thereby to adjust the performance of one or more of thedevices. Additionally or alternatively, the specification for thethickness 205 of the substrate 201 of the IC chip 200 can be adjusted,making it thicker or thinner in order to adjust the operatingtemperature of the one or more of the devices and, thereby to adjust theperformance of one or more of the devices. Additionally oralternatively, the specifications for the chip package can be adjusted,making it a more or less effective heat sink in order to adjust theoperating temperature of the one or more of the devices and, thereby toadjust the performance of one or more of the devices.

Processes 506-510 can be iteratively repeated in order to generate afinal design for the IC chip 200 (512). Then, the IC chip 200 can bemanufactured according to the final design (514).

As discussed above, all of the system and method embodiments for thermalmodeling disclosed herein require the use of a set of imaginary heatamounts, which are predetermined employing thermal potential theory andusing a test integrated circuit (IC) chip packaged in the same specifictype of chip package as the IC chip at issue. Thus, also disclosedherein is a method for acquiring such a set of values (X) for imaginaryheat amount (Q^(i)) to actual heat amount (Q) ratios and correspondingeffective thermal radiuses (r₀) associated with different locations,respectively on the IC chip.

Specifically, referring to the flow diagram of FIG. 7, this method cancomprise providing a test integrated circuit (IC) chip in a chip package(702). This test IC chip can comprise a substrate having a frontside anda backside opposite the frontside. The test IC chip can further comprisemultiple test devices 810 located at different locations on thefrontside.

FIG. 8 illustrates an exemplary test IC chip 800 mounted on a chipcarrier 891 (e.g., an organic laminate substrate) of a chip package 890.The test IC chip 800 comprises a substrate 801 having a specificthickness 805, a frontside 802 upon which various test devices 810 areformed and a backside 803 opposite the frontside 802. For illustrationpurposes, eight test devices are shown; however, it should be understoodthat any number of three or more test devices may be formed on thefrontside 802 of the substrate 801. The test devices 810 can compriseactive devices (e.g., field effect transistors, bipolar transistors,etc. and/or passive devices (e.g., resistors, capacitors, inductors,etc.). The test devices 810 can further be covered with interlayerdielectric material and back end of the line (BEOL) metal wiring levels880 that allow for interconnections between the devices and also withthe chip carrier 891. For purposes of illustration, the IC chip package890 is shown as a “flip chip package”. That is, the test IC chip 800 ismounted on the chip carrier 891 with the frontside 802 of the substrate801 facing the chip carrier 891 and solder joints 892 electricallyconnecting the metal wiring levels 880 to the chip carrier 891. A lid893 covers the test IC chip 800 and is also attached to the chip carrier891. Optionally, a thermal compound (e.g., thermal paste, gel or grease)can fill the gap between the lid 893 and the backside 803 of thesubstrate 801 for purposes of heat removal. Alternatively, the IC chippackage 890 can be a standard package (not shown) with the test IC chip800 mounted on the chip carrier 891 such that the backside of the testIC chip 800 faces the chip carrier 891 and such that wires are used tomake the required connection between the BEOL metal wiring levels 880and the chip carrier 891. In any case, the IC chip package 890 canfurther be configured for attachment to a printed circuit board (PCB).

The method can further comprise selecting one of the test devices (e.g.,test device 810(a)) at a specific location on the frontside 802 of thesubstrate 801 to be a heat source for which a value (X) of a specificratio of an imaginary heat amount to an actual heat amount and acorresponding effective thermal radius (r₀) to be determined (704).Furthermore, at process 704, and at least two others of the test devices(e.g., test devices 810(b)-(h)) are selected to be temperature sensors,wherein the centers of the temperature sensors 810(b)-(h) are separatedfrom the center of the heat source 810(a) by different distances (e.g.,see distances r_(1a-b)-r_(1a-g), respectively).

The method can further comprise biasing the heat source 810(a) (i.e.,biasing the test device that was selected to be the heat source) using aspecific supply voltage (706). Specifically, the supply voltage used tobias the heat source 810(a) can be a specific supply voltage that issufficiently high to heat the heat source 810(a) above a nominaltemperature. It should be noted that a second supply voltage can be usedto bias the temperature sensors 810(b)-(h) (i.e., the two or more othertest devices that were selected to be temperature sensors). However,this second supply voltage should be less than the supply voltage usedto bias the heat source and, more specifically, should be sufficientlylow so as to avoid self-heating of the temperature sensors.

The method can further comprise, during this biasing process,determining any changes in temperature of the heat source 810(a) and thetemperature sensors 810(b)-(h) relative to the nominal temperature(708). The changes in temperature of the heat source 810(a) and thetemperature sensors 810(b)-(h) can be determined, for example, bymeasuring a performance attribute of each of the test devices810(a)-(h), wherein the value of the performance attribute istemperature-dependent and, thereby indicative of the temperature.

The method can further comprise plotting the data acquired at process708 in a graph (710). Specifically, each change in temperature at eachtemperatures sensor that is located a different distance, respectively,can be plotted in a graph. As illustrated in FIG. 9, such a graph willthat indicate the relationship between any changes in temperature at thetemperature sensors 810(b)-(h) to the different distances that separatethe heat source 810(a) from those temperature sensors 810(b)-(h),respectively. It should be noted that, as mentioned above, only two ormore temperature sensors are required to find a relationship change intemperature-separation distance relationship; however, by using morethan two temperature sensors a more accurate representation of thisrelationship can be found.

The method can further comprise finding a curve for the followingequation (17) that fits the data acquired at process 708 and plotted ina graph at process 710 (712, see the curve shown in FIG. 10):

$\begin{matrix}{{{\Delta \; T} = {Q*\left( {\frac{1}{r\; 1} + \frac{X}{\sqrt{r_{1}^{2} + {4*t^{2}}}}} \right)}},} & (17)\end{matrix}$

where equation (17) is derived from equation (13) above and where ΔTrepresents the change in temperature at a temperature sensor, Qrepresents the amount of heat at the heat source, r₁ represents thedistance between the heat source and the temperature sensor and trepresents the thickness of the substrate.

It should be noted that this process 712 can be performed manually, forexample, by solving equation (13) for different values of X and Q untilsuch time as a curve that fits the data is found. Alternatively, thisprocess 712 can be performed using a least squares technique usingequations (11) and 12).

In any case, once the curve for equation (13) is found, the value (X) ofthe specific ratio of an imaginary heat amount to an actual heat amountto be associated with the specific location of that selected heat source810(a) can be extracted (714). Those skilled in the art will recognizethat, given equation (13), the shape of the curve will dictate how largeor small the value (X) of the ratio will be. That is, a relativelyshallow curve as illustrated in the graph of FIG. 10 will have a largerX value, whereas a relatively steep curve will have a smaller X value.

Once the value (X) of the specific ratio of an imaginary heat amount toan actual heat amount to be associated with the specific location of theheat source 810(a) is found, equation (14) above can be used todetermined a corresponding effective thermal radius (r₀) that is also tobe associated with the specific location of the heat source 810(a)(716).

Processes 704-716 can be repeated so that each of the test devices810(a)-(h) at each of the different locations are eventually selected tobe a heat source for which a value of a specific imaginary heat amountto actual heat amount ratio and a corresponding effective thermal radiusare determined. It should be understood that for different test devicesat different locations, the value X of the specific ratio of animaginary heat amount to an actual heat amount may or may not vary underthe same biasing conditions. Test devices within the same area of the ICchip (e.g., at the center of the IC chip) will typically have the sameor a similar X value, but a different X value than test devices in adifferent area of the IC chip (e.g., at the edge of the IC chip).

It should be understood that the actual heat amount (Q) and, thus, theimaginary heat amount (Q^(i)) associated with a given location of a testdevice will be different for different supply voltages (i.e., fordifferent biasing conditions); however, the value (X) of the ratio ofthe specific imaginary heat amount (Q^(i)) to the actual heat amount (Q)should always be the same. That is, for a given test device at a givenlocation, the value of X in the equation Q^(i)=XQ will always be thesame, regardless of the biasing conditions.

Following processes 704-716, a set of values (X) of ratios of animaginary heat amount to an actual heat amount and corresponding thermalradius that are associated with different locations on the chip,respectively, can be stored in memory (718). This set can subsequentlybe accessed (e.g., by a processor) and used to generate thermal modelsof localized temperature changes on a functional IC chip, using thesystem and/or method embodiments described above (720). It should benoted that the information in the set will only be usable for generatingthermal models associated with IC chips having a substrate with the samethickness as that of the test IC chip and packaged in the same type ofchip package as that used for the test IC chip.

Also disclosed herein is a computer program product for performingthermal modeling, as described above. The computer program product cancomprise a computer readable storage medium having program instructionsembodied therewith (e.g., stored thereon). These program instructionscan be executable by the computer to cause the computer to perform theabove-described method for thermal modeling. More particularly, thepresent invention may be a system, a method, and/or a computer programproduct. The computer program product may include a computer readablestorage medium (or media) having computer readable program instructionsthereon for causing a processor to carry out aspects of the presentinvention.

The computer readable storage medium can be a tangible device that canretain and store instructions for use by an instruction executiondevice. The computer readable storage medium may be, for example, but isnot limited to, an electronic storage device, a magnetic storage device,an optical storage device, an electromagnetic storage device, asemiconductor storage device, or any suitable combination of theforegoing. A non-exhaustive list of more specific examples of thecomputer readable storage medium includes the following: a portablecomputer diskette, a hard disk, a random access memory (RAM), aread-only memory (ROM), an erasable programmable read-only memory (EPROMor Flash memory), a static random access memory (SRAM), a portablecompact disc read-only memory (CD-ROM), a digital versatile disk (DVD),a memory stick, a floppy disk, a mechanically encoded device such aspunch-cards or raised structures in a groove having instructionsrecorded thereon, and any suitable combination of the foregoing. Acomputer readable storage medium, as used herein, is not to be construedas being transitory signals per se, such as radio waves or other freelypropagating electromagnetic waves, electromagnetic waves propagatingthrough a waveguide or other transmission media (e.g., light pulsespassing through a fiber-optic cable), or electrical signals transmittedthrough a wire.

Computer readable program instructions described herein can bedownloaded to respective computing/processing devices from a computerreadable storage medium or to an external computer or external storagedevice via a network, for example, the Internet, a local area network, awide area network and/or a wireless network. The network may comprisecopper transmission cables, optical transmission fibers, wirelesstransmission, routers, firewalls, switches, gateway computers and/oredge servers. A network adapter card or network interface in eachcomputing/processing device receives computer readable programinstructions from the network and forwards the computer readable programinstructions for storage in a computer readable storage medium withinthe respective computing/processing device.

Computer readable program instructions for carrying out operations ofthe present invention may be assembler instructions,instruction-set-architecture (ISA) instructions, machine instructions,machine dependent instructions, microcode, firmware instructions,state-setting data, or either source code or object code written in anycombination of one or more programming languages, including an objectoriented programming language such as Smalltalk, C++ or the like, andconventional procedural programming languages, such as the “C”programming language or similar programming languages. The computerreadable program instructions may execute entirely on the user'scomputer, partly on the user's computer, as a stand-alone softwarepackage, partly on the user's computer and partly on a remote computeror entirely on the remote computer or server. In the latter scenario,the remote computer may be connected to the user's computer through anytype of network, including a local area network (LAN) or a wide areanetwork (WAN), or the connection may be made to an external computer(for example, through the Internet using an Internet Service Provider).In some embodiments, electronic circuitry including, for example,programmable logic circuitry, field-programmable gate arrays (FPGA), orprogrammable logic arrays (PLA) may execute the computer readableprogram instructions by utilizing state information of the computerreadable program instructions to personalize the electronic circuitry,in order to perform aspects of the present invention.

Aspects of the present invention are described herein with reference toflowchart illustrations and/or block diagrams of methods, apparatus(systems), and computer program products according to embodiments of theinvention. It will be understood that each block of the flowchartillustrations and/or block diagrams, and combinations of blocks in theflowchart illustrations and/or block diagrams, can be implemented bycomputer readable program instructions.

These computer readable program instructions may be provided to aprocessor of a general purpose computer, special purpose computer, orother programmable data processing apparatus to produce a machine, suchthat the instructions, which execute via the processor of the computeror other programmable data processing apparatus, create means forimplementing the functions/acts specified in the flowchart and/or blockdiagram block or blocks. These computer readable program instructionsmay also be stored in a computer readable storage medium that can directa computer, a programmable data processing apparatus, and/or otherdevices to function in a particular manner, such that the computerreadable storage medium having instructions stored therein comprises anarticle of manufacture including instructions which implement aspects ofthe function/act specified in the flowchart and/or block diagram blockor blocks.

The computer readable program instructions may also be loaded onto acomputer, other programmable data processing apparatus, or other deviceto cause a series of operational steps to be performed on the computer,other programmable apparatus or other device to produce a computerimplemented process, such that the instructions which execute on thecomputer, other programmable apparatus, or other device implement thefunctions/acts specified in the flowchart and/or block diagram block orblocks.

The flowchart and block diagrams in the Figures illustrate thearchitecture, functionality, and operation of possible implementationsof systems, methods, and computer program products according to variousembodiments of the present invention. In this regard, each block in theflowchart or block diagrams may represent a module, segment, or portionof instructions, which comprises one or more executable instructions forimplementing the specified logical function(s). In some alternativeimplementations, the functions noted in the block may occur out of theorder noted in the figures. For example, two blocks shown in successionmay, in fact, be executed substantially concurrently, or the blocks maysometimes be executed in the reverse order, depending upon thefunctionality involved. It will also be noted that each block of theblock diagrams and/or flowchart illustration, and combinations of blocksin the block diagrams and/or flowchart illustration, can be implementedby special purpose hardware-based systems that perform the specifiedfunctions or acts or carry out combinations of special purpose hardwareand computer instructions.

A representative hardware environment (i.e., a computer system) forimplementing the system, method and computer program product for thermalmodeling described above is depicted in FIG. 12. This schematic drawingillustrates a hardware configuration of an information handling/computersystem in accordance with the embodiments herein. The system comprisesat least one processor or central processing unit (CPU) 10. The CPUs 10are interconnected via a system bus 12 to various devices such as arandom access memory (RAM) 14, read-only memory (ROM) 16, and aninput/output (I/O) adapter 18. The I/O adapter 18 can connect toperipheral devices, such as disk units 11 and tape drives 13, or otherprogram storage devices that are readable by the system. The system canread the inventive instructions on the program storage devices andfollow these instructions to execute the methodology of the embodimentsherein. The system further includes a user interface adapter 19 thatconnects a keyboard 15, mouse 17, speaker 24, microphone 22, and/orother user interface devices such as a touch screen device (not shown)to the bus 12 to gather user input. Additionally, a communicationadapter 20 connects the bus 12 to a data processing network 25, and adisplay adapter 21 connects the bus 12 to a display device 23 which maybe embodied as an output device such as a monitor, printer, ortransmitter, for example.

It should be understood that the terminology used herein is for thepurpose of describing the disclosed systems, methods and computerprogram product for thermal modeling and is not intended to be limiting.For example, as used herein, the singular forms “a”, “an” and “the” areintended to include the plural forms as well, unless the context clearlyindicates otherwise. Additionally, as used herein, the terms “comprises”“comprising”, “includes” and/or “including” specify the presence ofstated devices, integers, steps, operations, elements, and/orcomponents, but do not preclude the presence or addition of one or moreother devices, integers, steps, operations, elements, components, and/orgroups thereof. Furthermore, as used herein, terms such as “right”,“left”, “vertical”, “horizontal”, “top”, “bottom”, “upper”, “lower”,“under”, “below”, “underlying”, “over”, “overlying”, “parallel”,“perpendicular”, etc., are intended to describe relative locations asthey are oriented and illustrated in the drawings (unless otherwiseindicated) and terms such as “touching”, “on”, “in direct contact”,“abutting”, “directly adjacent to”, etc., are intended to indicate thatat least one element physically contacts another element (without otherelements separating the described elements). The correspondingstructures, materials, acts, and equivalents of all means or step plusfunction elements in the claims below are intended to include anystructure, material, or act for performing the function in combinationwith other claimed elements as specifically claimed.

Therefore, disclosed above are embodiments of a system and method forthermal modeling and, particularly, for modeling a temperature change ofa device at one location on a frontside of an integrated circuit (IC)chip due to self-heating, if any, and further due to thermal couplingwith device(s) at other location(s) on the frontside of the IC chip,given the possibility of inefficient heat removal from the backside ofthe IC chip. The embodiments avoid the need for calculations of thermalresistances by employing thermal potential theory. Specifically, in theembodiments, a boundary condition can be set off the backside of the ICchip. The boundary condition is analogous to an “image charge” used inelectrostatics and is referred to herein as an imaginary heat amount. Inorder to implement the system and method, ratios of an imaginary heatamount to an actual heat amount for different locations on the IC chipmust be predetermined using a test integrated circuit (IC) chip, whichhas multiple test devices at different locations and the same packagingsolution as the IC chip at issue. During testing, one test device at onespecific location on the test IC chip can be selected to function as aheat source, while the other test devices at other locations on the testIC chip function as temperature sensors. The heat source can be biasedand changes in temperature at the heat source and at the sensors can bedetermined. These changes in temperature can then be used to calculatethe value of the imaginary heat amount to actual heat amount ratio to beassociated with the specific location. These processes can be repeatedfor all of the different locations and a set of such imaginary heatamount to actual heat amount ratios can then be stored in memory for usein thermal modeling.

The descriptions of the various embodiments of the present inventionhave been presented for purposes of illustration, but are not intendedto be exhaustive or limited to the embodiments disclosed. Manymodifications and variations will be apparent to those of ordinary skillin the art without departing from the scope and spirit of the describedembodiments. The terminology used herein was chosen to best explain theprinciples of the embodiments, the practical application or technicalimprovement over technologies found in the marketplace, or to enableothers of ordinary skill in the art to understand the embodimentsdisclosed herein.

1-20. (canceled)
 21. A method comprising: providing a test integratedcircuit chip in a package, the test integrated circuit chip comprising:a substrate having a frontside and a backside opposite the frontside;and test devices at different locations on the frontside, selecting oneof the test devices on the frontside of the substrate to be a heatsource and others of the test devices to be sensors, the one of the testdevices being at a specific location; biasing the heat source using asupply voltage so as to heat the heat source above a nominaltemperature; during the biasing of the heat source, determining changesin temperature relative to the nominal temperature at the heat sourceand at the sensors; based on the changes in temperature, determining avalue of a ratio between a specific imaginary heat amount at a point offthe backside of the substrate and an actual heat amount at the heatsource, wherein the point off the backside of the substrate is alignedvertically with the specific location of the one of the test devices onthe frontside of the substrate and wherein distances between thebackside of the substrate and the point and between the backside of thesubstrate and the specific location are equal; and, storing, in memory,the value of the ratio, the value of the ratio being associated with thespecific location and being stored so as to be available for use ingenerating thermal models of localized temperature changes on afunctional integrated circuit chip.
 22. The method of claim 21, thedetermining of the changes in temperature relative to the nominaltemperature of the heat source and of the sensors comprising measuring aperformance attribute indicative of temperature.
 23. The method of claim21, further comprising, during the biasing of the heat source with thesupply voltage, biasing the sensors with a second supply voltage, thesecond supply voltage being less than the supply voltage and furtherbeing sufficiently low to avoid self heating of the sensors above thenominal temperature.
 24. The method of claim 21, the determining of thevalue of the ratio comprising: plotting data indicating a relationshipbetween changes in temperatures at the sensors and distances between theheat source and the sensors, respectively; finding a curve for thefollowing equation that fits the data:${{\Delta \; T} = {Q*\left( {\frac{1}{{r\;}_{1}} + \frac{X}{\sqrt{r_{1}^{2} + {4*t^{2}}}}} \right)}},$where ΔT represents a change in temperature at a temperature sensor, Qrepresents an amount of heat at the heat source, r₁ represents adistance between the heat source and the temperature sensor, trepresents a thickness of a substrate and X represents the value of theratio; and, based on the curve, determining the value of the ratio. 25.The method of claim 21, further comprising repeating the selecting, thebiasing, the determining of the changes in the temperature and thedetermining of the specific imaginary heat amount for each of the testdevices at the different locations.